inchange semiconductor isc product specification isc silicon npn power transistor 2SC5993 description good linearity of h fe high collector-emitter breakdown voltage- : v (br)ceo = 180v(min) complement to type 2sa2140 applications power amplification for tv vm circuit absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 180 v v ebo emitter-base voltage 6 v i c collector current-continuous 1.5 a i cm collector current-peak 3.0 a collector power dissipation @ t a =25 2.0 p c collector power dissipation @t c =25 20 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5993 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 180 v v ce( sat ) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 0.5 v i cbo collector cutoff current v cb = 180v; i e = 0 100 a i ebo emitter cutoff current v eb = 6v; i c = 0 100 a h fe dc current cain i c = 0.1a; v ce = 5v 60 240 f t current-gain?bandwidth product i c = 0.2a; v ce = 10v; f= 10mhz 130 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 10 pf switching time, resistance loaded t on turn-on time 0.1 s t stg storage time 0.5 s t f fall time i c = 0.4a, i b1 = -i b2 = 0.04a; v cc = 100v 0.1 s ? h fe classifications q p 60-140 120-240 isc website www.iscsemi.cn 2
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